1/8 november 2000 STB55NE06L n-channel 60v - 0.18 w - 55a d 2 pak stripfet? power mosfet n typical r ds (on) = 0.018 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n high dv/dt capability n low threshold drive n for through-hole version contact sales office description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n dc motor control n dc-dc & dc-ac converters n synchronous rectification type v dss r ds(on) i d STB55NE06L 60 v <0.022 w 55 a d 2 pak to-263 (suffixt4) 1 3 absolute maximum ratings ( )pulse width limited by safe operating area. i sd 55a, di/dt 300a/s, v dd v (br)dss , t j t jmax. symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 15 v i d drain current (continuos) at t c = 25c 55 a i d drain current (continuos) at t c = 100c 39 a i dm ( ) drain current (pulsed) 220 a p tot total dissipation at t c = 25c 130 w derating factor 0.86 w/c dv/dt (2) peak diode recovery voltage slope 7 v/ns t stg storage temperature C60 to 175 c t j max. operating junction temperature 175 c internal schematic diagram
STB55NE06L 2/8 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic r thj-case thermal resistance junction-case max 1.15 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thc-sink thermal resistance case-sink typ 0.5 c/w t j maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 55 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 15 v) 200 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 15v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 1.7 2.5 v i ds(on) static drain-source on resistance v gs = 5v i d = 27.5 a v gs = 10v i d = 27.5 a 0.022 0.019 0.028 0.022 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs =10v 55 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =27.5 a 20 30 s c iss input capacitance v ds = 25v f = 1 mhz v gs = 0 2800 3750 pf c oss output capacitance 375 500 pf c rss reverse transfer capacitanc- es 100 140 pf
3/8 STB55NE06L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30v i d = 27.5 a r g = 4.7 w v gs = 5 v (see test circuit, figure 3) 40 100 55 140 ns ns q g total gate charge v dd =48v i d =55a v gs =5v 40 55 nc q gs gate-source charge 13 nc q gd gate-drain charge 20 nc symbol parameter test conditions min. typ. max. unit t d(on) t r t c turn-on delay time rise time fall time cross-over time v dd = 48 v i d = 55 a r g = 4.7 w v gs = 5 v (see test circuit, figure 5) 25 40 65 35 55 90 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 55 a i sdm ( ) source-drain current (pulsed) 220 a v sd (*) forward on voltage i sd = 55 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 55 a di/dt = 100 a/s v dd = 30v t j = 150 c (see test circuit, figure 3) 65 180 5.5 ns m c a electrical characteristics (continued) safe operating area thermal impedance
STB55NE06L 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STB55NE06L normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics
STB55NE06L 6/8 fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 1: unclamped inductive load test circuit
7/8 STB55NE06L d 2 pak mechanical data dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o
STB55NE06L 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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